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| DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES * Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS * RF applications such as: - UHF television tuners - Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking code: MHp. MAM039 handbook, halfpage BF996S DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V up to Tamb = 60 C CONDITIONS - - - - 18 TYP. MAX. 20 30 200 150 - 2.6 - - UNIT V mA mW C mS pF fF dB input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 2.3 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2-S = 4 V 25 f = 200 MHz GS = 2 mS; BS = BSopt; ID = 10 mA; VDS = 15 V; VGS-2 = 4 V 1 April 1991 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID ID(AV) IG1-S IG1-S Ptot Tstg Tj PARAMETER drain-source voltage drain current (DC) average drain current gate 1 source gate 2 source total power dissipation storage temperature range junction temperature up to Tamb = 60 C; note 1 CONDITIONS - - - - - - -65 - MIN. BF996S MAX. 20 30 30 10 10 200 +150 150 V UNIT mA mA mA mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 460 UNIT K/W Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 x 10 x 0.7 mm. handbook, halfpage 200 MGE792 Ptot (mW) 100 0 0 100 Tamb (C) 200 Fig.2 Power derating curve. April 1991 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL IG1-SS IG2-SS V(BR)G1-SS V(BR)G2-SS IDSS V(P)G1-S V(P)G2-S PARAMETER gate cut-off current gate cut-off current gate-source breakdown voltage gate-source breakdown voltage drain current gate-source cut-off current gate-source cut-off current CONDITIONS VG1-S = 5 V; VG2-S = VDS = 0 VG2-S = 5 V; VG1-S = VDS = 0 IG1-S = 10 mA; VG2-S = VDS = 0 IG2-S = 10 mA; VG1-S = VDS = 0 VDS = 15 V; VG1-S = 0; VG2-S = 4 V ID = 20 A; VDS = 15 V; VG2-S = 4 V ID = 20 A; VDS = 15 V; VG1-S = 0 MIN. - - 6 6 4 - - BF996S MAX. 50 50 20 20 20 -2.5 -2 UNIT nA nA V V mA V V DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 C. SYMBOL Y fs Cig1-s Cig2-s Crs Cos F GP PARAMETER transfer admittance input capacitance at gate 1 input capacitance at gate 2 feedback capacitance output capacitance noise figure power gain f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 200 MHz; GS = 2 mS; BS = BSopt; GL = 0.5 mS; BL = BLopt f = 800 MHz; GS = 3.3 mS; BS = BSopt; GL = 1 mS; BL = BLopt CONDITIONS MIN. 15 - - - - - - - TYP. 18 2.3 1.2 25 0.8 1 1.8 25 18 MAX. - 2.6 - - - - - - - UNIT mS pF pF fF pF dB dB dB dB f = 800 MHz; GS = 3.3 mS; BS = BSopt - April 1991 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET PACKAGE OUTLINE BF996S handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. See also Soldering recommendations. Fig.3 SOT143. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. April 1991 5 |
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